gunter semiconductor gmbh gunter semiconductor gmbh gunter semiconductor gmbh gunter semiconductor gmbh GLC110 n channel power mosfet for logic driver chip specification general description: * advanced process technology * dynamic dv/dt rating * 175 operating temperature * fast switching * fully avalanche rated * r ds(on) rated at vgs = 5v * ease of parallel mechanical data: d3 dimension 1.61mm x 2.21mm thickness: 400 ? m metallization : top : : al backside : crniag / au suggested bonding conditions: die mounting: solder perform 95/5 pbsn or 92.5./2.5/5 pbagin source bonding wire : 5 mil al absolute maximum rating @ta=25 characteristics symbol limit unit test conditions drain-to-source breakdown voltage v(br)dss 100 v vgs=0v, id=250 ? static drain-to - source on-resistance rds(on) 0.54 ? vgs=5v, id=3.45 continuous drain current ( in target package) id@25 5.6 a vgs= 5v continuous drain current ( in target package) id@100 4a vgs= 5v operation junction temperature tj -55~175 storage temperature t str -55~175 target device: irl510 to-220ab p d 43 w @tc=25
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